STABILITY OF GENERATION-RECOMBINATION INDUCED DISSIPATIVE STRUCTURES IN SEMICONDUCTORS

被引：21
|
作者：
SCHOLL, E
机构：
来源：
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1983年 / 52卷 / 04期
关键词：
D O I：
10.1007/BF01307402
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：321 / 334
页数：14
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