STABILITY OF GENERATION-RECOMBINATION INDUCED DISSIPATIVE STRUCTURES IN SEMICONDUCTORS

被引：21

|

作者：

SCHOLL, E

机构：

来源：

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1983年 / 52卷 / 04期

关键词：

D O I：

10.1007/BF01307402

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

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页码：321 / 334

页数：14

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