AN EXAMINATION OF DEFECTS IN INP SINGLE-CRYSTALS GROWN BY THE LIQUID-ENCAPSULATED CZOCHRALSKI TECHNIQUE USING SYNCHROTRON X-RAY TOPOGRAPHY

被引：8
|
作者：
NAUKKARINEN, K
TUOMI, T
AIRAKSINEN, VM
LAAKSO, KM
LAHTINEN, JA
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1983年 / 64卷 / 03期
关键词：
D O I：
10.1016/0022-0248(83)90332-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：485 / 491
页数：7
相关论文
共 50 条
  • [11] ELECTRON-MOBILITY AND MINORITY-CARRIER LIFETIME OF NORMAL-INP SINGLE-CRYSTALS GROWN BY LIQUID-ENCAPSULATED CZOCHRALSKI METHOD
    YAMAGUCHI, M
    SHINOYAMA, S
    UEMURA, C
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6429 - 6431
  • [12] INTERNAL-STRESS DISTRIBUTION ESTIMATION IN LIQUID-ENCAPSULATED CZOCHRALSKI GROWN GAAS SINGLE-CRYSTALS USING MEASURED TEMPERATURE ON DUMMY CRYSTALS
    NISHIO, J
    YASUNAGA, T
    NAKATA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (02): : 716 - 721
  • [13] THERMAL-STRESSES AND DISLOCATION FORMATION IN LIQUID-ENCAPSULATED CZOCHRALSKI-GROWN INP CRYSTALS
    FOGLIANI, S
    MASI, M
    CARRA, S
    MOLINAS, B
    GUADALUPI, G
    MEREGALLI, L
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 76 - 79
  • [14] STUDY OF SEED-MELT INTERFACE IN CZOCHRALSKI GROWN KCL SINGLE-CRYSTALS BY X-RAY TOPOGRAPHY
    LAL, K
    MURTHY, RVA
    KUMAR, V
    SHARMA, SD
    HALDER, SK
    ACTA CRYSTALLOGRAPHICA SECTION A, 1984, 40 : C186 - C186
  • [15] INCLUSION-LIKE DEFECTS IN CZOCHRALSKI GROWN INP SINGLE-CRYSTALS
    FRANZOSI, P
    SALVIATI, G
    COCITO, M
    TAIARIOL, F
    GHEZZI, C
    JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) : 388 - 398
  • [16] X-ray Diffraction Topography - Investigation of Single Crystals Grown by the Czochralski Method
    Lefeld-Sosnowska, M.
    Malinowska, A.
    ACTA PHYSICA POLONICA A, 2013, 124 (02) : 360 - 371
  • [17] Investigation of copper doped InP single crystals grown by Czochralski technique for use in X-ray detection
    Zdansky, K
    Zavadil, J
    Pekarek, L
    Gorodynskyy, V
    Kozak, H
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (04): : 555 - 560
  • [18] STRUCTURAL AND MECHANICAL-PROPERTIES OF ION-IMPLANTED GAAS AND INP SINGLE-CRYSTALS GROWN BY THE LIQUID ENCAPSULATED CZOCHRALSKI TECHNIQUE
    AROKIARAJ, J
    ARULKUMARAN, S
    UDHAYSANKAR, M
    SANTHANARAGHAVAN, P
    KUMAR, J
    RAMASAMY, P
    NAIR, KGM
    MAGUDAPATHY, P
    THAMPI, NS
    KRISHAN, K
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 461 - 464
  • [19] LATTICE-DEFECTS IN SINGLE-CRYSTALS STUDIED BY X-RAY TOPOGRAPHY
    ZARKA, A
    ANNALES DE CHIMIE-SCIENCE DES MATERIAUX, 1979, 4 (6-7): : 550 - 550
  • [20] Study of defect structures in MLEK grown InP single crystals by Synchrotron white beam X-ray topography
    Si, W
    Chung, H
    Dudley, M
    Anselmo, A
    Bliss, DF
    Prasad, V
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 610 - 613
12345