STRESS, STRAIN, AND SYMMETRY OF PSEUDOMORPHICALLY GROWN EPITAXIAL LAYERS

被引：2
|
作者：
TEMPEL, A
MADER, M
机构：
[1] Technische Universität Dresden, Institut für Werkstoffphysik, Dresden, O-8027
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1992年 / 27卷 / 02期
关键词：
D O I：
10.1002/crat.2170270218
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The complete stress and strain tensors and the point symmetry of pseudomorphically grown epitaxial layers are calculated from the epitaxial relationship and the elastic constants of the deposit material. The angle misalignment of crystallographic directions in the deposit due to the strain is also calculated and results are given for the epitaxial systems CaF2/Si(100) and CaF2/Si(111).
引用
收藏
页码：259 / 266
页数：8
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