On the origin of strain relaxation in epitaxial CdZnO layers

被引：0

作者：

Redondo-Cubero, A. ^{[1
,2
]}

Rodrigues, J. ^{[3
]}

Brandt, M. ^{[4
,5
]}

Schaefer, P. ^{[4
]}

Henneberger, F. ^{[4
]}

Correia, M. R. ^{[3
]}

Monteiro, T. ^{[3
]}

Alves, E. ^{[1
,2
]}

Lorenz, K. ^{[1
,2
]}

机构：

[1] Univ Tecn Lisboa, Inst Super Tecn, Campus Tecnol & Nucl,Estr Nacl 10, P-2695066 Bobadela Lrs, Portugal

[2] Univ Lisbon, Ctr Fisi Nucl, P-1649003 Lisbon, Portugal

[3] Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal

[4] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany

[5] Aalto Univ, Low Temp Lab, FI-00076 Aalto, Finland

来源：

OXIDE-BASED MATERIALS AND DEVICES IV | 2013年 / 8626卷

关键词：

CdZnO; strain; phase separation; X-ray diffraction; Rutherford backscattering spectrometry; THIN-FILMS; SIMULATION; CRYSTALS; MG;

D O I：

10.1117/12.2002969

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The origin of a double peak, detected by X-ray diffraction (XRD), in a wurtzite CdxZn1-xO (x=0.17) epilayer, is investigated using Rutherford backscattering spectrometry in channeling geometry (RBS/C). In-depth compositional characterization by RBS/C demonstrates that strain relaxation does not take place via compositional phase separation and does not cause any compositional pulling effects. On the contrary, RBS/C angular scans demonstrate that relaxation is a consequence of progressive structural changes during the heteroepitaxial growth of the film on MgZnO, likely due to the large distortion of the lattice induced by the high Cd content.

引用

页数：7

共 50 条

[1] Strain relaxation in compositionally graded epitaxial layers
Kim, SD
Lord, SM
Harris, JS
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (02): : 642 - 646
[2] Dislocation dynamics of strain relaxation in epitaxial layers
Wang, TC
Zhang, YW
Chua, SJ
JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) : 6069 - 6072
[3] Anisotropic misfit strain relaxation in thin epitaxial layers
Domagala, J
Bak-Misiuk, J
Adamczewska, J
Zytkiewicz, ZR
Dynowska, E
Trela, J
Dobosz, D
Janik, E
Leszczynski, M
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 171 (01): : 289 - 294
[4] Relaxation of thermal strain in GaN epitaxial layers grown on sapphire
Gfrorer, O
Schlusener, T
Harle, V
Scholz, F
Hangleiter, A
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 43 (1-3): : 250 - 252
[5] Anisotropic strain relaxation of GaInP epitaxial layers in compression and tension
Matragrano, MJ
Shealy, JR
Krishnamoorthy, V
JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) : 8371 - 8378
[6] Strain relaxation in AlN epitaxial layers grown on GaN single crystals
Langer, R
Barski, A
Barbier, A
Renaud, G
Leszczynski, M
Grzegory, I
Porowski, S
JOURNAL OF CRYSTAL GROWTH, 1999, 205 (1-2) : 31 - 35
[7] Ion beam induced strain relaxation in pseudomorphous epitaxial SiGe layers
Vyatkin, AF
Avrutin, VS
Izyumskaya, NF
Egorov, VK
Starkov, VV
Zinenko, VI
Smirnova, IA
Vdovin, VI
Yugova, TG
2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2000, : 70 - 72
[8] Theory of strain relaxation for epitaxial layers grown on substrate of a finite dimension
Huang, FY
PHYSICAL REVIEW LETTERS, 2000, 85 (04) : 784 - 787
[9] Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogen implantation
Mantl, S.
Hollaender, B.
Liedtke, R.
Mesters, S.
Herzog, H.J.
Kibbel, H.
Hackbarth, T.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1999, 147 (1-4): : 29 - 34
[10] Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogen implantation
Mantl, S
Holländer, B
Liedtke, R
Mesters, S
Herzog, HJ
Kibbel, H
Hackbarth, T
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 147 (1-4): : 29 - 34

← 1 2 3 4 5 →