DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS

被引：61
|
作者：
ALPERIN, ME
HOLLAWAY, TC
HAKEN, RA
GOSMEYER, CD
KARNAUGH, RV
PARMANTIE, WD
机构：
[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,BIPOLAR WATER FABRICAT GRP,DALLAS,TX 75265
[2] TEXAS INSTRUMENTS INC,VLSI LAB,DALLAS,TX 75265
[3] TEXAS INSTRUMENTS INC,SEMICOND PROC GRP,DALLAS,TX 75265
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1985年 / 20卷 / 01期
关键词：
D O I：
10.1109/JSSC.1985.1052277
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：61 / 69
页数：9
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