RECOVERY OF SUBMICROMETER PMOSFETS FROM HOT-CARRIER DEGRADATION BY HIGH-FIELD INJECTION

被引：0
|
作者：
ZHANG, JF
TAYLOR, S
ECCLESTON, W
BARLOW, K
机构：
[1] UNIV LIVERPOOL,DEPT ELECT ENGN & ELECTR,LIVERPOOL L69 3BX,ENGLAND
[2] GEL PLESSEY SEMICOND LTD,PLYMOUTH PL6 7BQ,DEVON,ENGLAND
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 12期
关键词：
HOT-ELECTRON EFFECTS; MOSFETS; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19930732
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Charge carrier tunnelling into gate oxide under high field strength (e.g. 8 MV/cm) is found to be an efficient method for the recovery of hot electron induced pMOSFET degradation, including hot electron induced punchthrough effects. The physical processes responsible for the recovery are investigated.
引用
收藏
页码：1097 / 1099
页数：3
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