SELECTIVE EPITAXIAL-GROWTH WITH OXIDE-POLYCRYSTALLINE SILICON-OXIDE MASKS BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION

被引：5

作者：

HSIEH, TY ^{[1
]}

JUNG, KH ^{[1
]}

KWONG, DL ^{[1
]}

SPRATT, DB ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 09期

关键词：

D O I：

10.1063/1.103392

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used rapid thermal processing chemical vapor deposition for Si selective epitaxial growth using a mask consisting of a sandwich structure of SiO2 on doped polycrystalline Si on SiO2. Lateral polycrystalline Si growth from the sidewalls of the polycrystalline Si layer was also observed and resulted in polycrystalline "bumps" along the mask sidewalls. Otherwise, the epitaxial Si layer was defect-free.

引用

页码：872 / 874

页数：3

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