SELECTIVE EPITAXIAL-GROWTH WITH OXIDE-POLYCRYSTALLINE SILICON-OXIDE MASKS BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION

We have used rapid thermal processing chemical vapor deposition for Si selective epitaxial growth using a mask consisting of a sandwich structure of SiO2 on doped polycrystalline Si on SiO2. Lateral polycrystalline Si growth from the sidewalls of the polycrystalline Si layer was also observed and resulted in polycrystalline "bumps" along the mask sidewalls. Otherwise, the epitaxial Si layer was defect-free.