LOW-TEMPERATURE THERMAL-CONDUCTIVITY OF HEAVILY DOPED P-TYPE SEMICONDUCTORS

被引：5

作者：

SOTA, T ^{[1
]}

SUZUKI, K ^{[1
]}

FORTIER, D ^{[1
]}

机构：

[1] FAC MED NECKER ENFANTS MALAD,BIOPHYS LAB,PARIS 15,FRANCE

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 33期

关键词：

D O I：

10.1088/0022-3719/17/33/006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：5935 / 5944

页数：10

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