LOW-TEMPERATURE THERMAL-CONDUCTIVITY OF HEAVILY DOPED P-TYPE SEMICONDUCTORS

被引：5
|
作者：
SOTA, T [1 ]
SUZUKI, K [1 ]
FORTIER, D [1 ]
机构：
[1] FAC MED NECKER ENFANTS MALAD,BIOPHYS LAB,PARIS 15,FRANCE
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 33期
关键词：
D O I：
10.1088/0022-3719/17/33/006
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：5935 / 5944
页数：10
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