ELECTRON-IRRADIATION ASSISTED ANNEALING OF BORON AND PHOSPHORUS IMPLANTED SILICON LAYERS

被引：6
|
作者：
SUSKI, J
CSEPREGI, L
GYULAI, J
RZEWUSKI, H
WERNER, Z
机构：
[1] INST NUCL RES,SWIERK,POLAND
[2] CENT RES INST PHYS,BUDAPEST,HUNGARY
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1976年 / 29卷 / 03期
关键词：
D O I：
10.1080/00337577608233501
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：137 / 141
页数：5
相关论文
共 50 条
  • [21] Activation of Silicon Implanted with Phosphorus and Boron Atoms by Infrared Semiconductor Laser Rapid Annealing
    Ukawa, Kan
    Kanda, Yasushi
    Sameshima, Toshiyuki
    Sano, Naoki
    Naito, Masao
    Hamamoto, Nariaki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (07) : 0765031 - 0765037
  • [22] BEHAVIOR OF BORON AND PHOSPHORUS IMPURITIES IN SILICON DURING IRRADIATION WITH NEUTRONS AND SUBSEQUENT ANNEALING
    AKHMETOV, VD
    BOLOTOV, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (09): : 984 - 988
  • [23] FLAME ANNEALING OF ARSENIC AND BORON IMPLANTED SILICON
    NARAYAN, J
    YOUNG, RT
    APPLIED PHYSICS LETTERS, 1983, 42 (05) : 466 - 468
  • [24] LASER ANNEALING OF BORON-IMPLANTED SILICON
    YOUNG, RT
    WHITE, CW
    CLARK, GJ
    NARAYAN, J
    CHRISTIE, WH
    MURAKAMI, M
    KING, PW
    KRAMER, SD
    APPLIED PHYSICS LETTERS, 1978, 32 (03) : 139 - 141
  • [25] FLASH - LAMP ANNEALING OF BORON IMPLANTED SILICON
    GAIDUK, PI
    KOMAROV, FF
    PILIPENKO, VA
    SOLOVYEV, VS
    STERZHANOV, NI
    RADIATION EFFECTS LETTERS, 1984, 86 (06): : 205 - 211
  • [26] IONIZATION ENHANCED ANNEALING IN PHOSPHORUS IMPLANTED SILICON
    SUSKI, J
    KRYNICKI, J
    RZEWUSKI, H
    GYULAI, J
    LOFERSKI, JJ
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 35 (1-2): : 13 - 16
  • [27] ANNEALING OF ZINC-IMPLANTED SILICON LAYERS
    MUSTAFIN, TN
    POPOV, VP
    SERYAPIN, VG
    SMIRNOV, LS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (01): : 75 - 77
  • [28] RANGE OF IMPLANTED BORON, PHOSPHORUS, AND ARSENIC IN SILICON
    DAVIES, DE
    CANADIAN JOURNAL OF PHYSICS, 1969, 47 (16) : 1750 - &
  • [29] EFFECTS OF ELECTRON-IRRADIATION ON SILICON PHOTOVOLTAIC CELLS
    SOLIMAN, FAS
    RAGEH, MSI
    ELBEHAY, AZ
    ISOTOPENPRAXIS, 1991, 27 (03): : 147 - 149
  • [30] PRODUCTION OF PARAMAGNETIC DEFECTS IN SILICON BY ELECTRON-IRRADIATION
    SIEVERTS, EG
    MULLER, SH
    AMMERLAAN, CAJ
    SOLID STATE COMMUNICATIONS, 1978, 28 (02) : 221 - 225
12345