INTERBAND-CURRENT THEORY FOR ESAKI DIODES

被引:2
|
作者
WUNSCHE, HJ [1 ]
HENNEBERGER, K [1 ]
机构
[1] HUMBOLDT UNIV,SEKT PHYS,BERLIN,GER DEM REP
来源
关键词
D O I
10.1002/pssb.2220730123
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:245 / 254
页数:10
相关论文
共 50 条
  • [1] TUNNELING CURRENT IN ESAKI DIODES
    BATES, CW
    PHYSICAL REVIEW, 1961, 121 (04): : 1070 - &
  • [2] EXCESS AND HUMP CURRENT IN ESAKI DIODES
    CLAASSEN, RS
    JOURNAL OF APPLIED PHYSICS, 1961, 32 (11) : 2372 - &
  • [3] EQUIVALENT NOISE CURRENT OF ESAKI DIODES
    PUCEL, RA
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1961, 49 (06): : 1080 - &
  • [4] MECHANISM OF DEGRADATION OF PEAK CURRENT IN GE ESAKI DIODES
    NEMOTO, K
    ELECTRONICS & COMMUNICATIONS IN JAPAN, 1970, 53 (08): : 160 - &
  • [5] TUNNEL CURRENT IN ESAKI DIODES UNDER HYDROSTATIC PRESSURE
    POCHAT, A
    JOHANNIN, P
    COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES SERIE B, 1968, 266 (22): : 1379 - &
  • [6] Si Esaki diodes with high peak to valley current ratios
    Oehme, M.
    Haehnel, D.
    Werner, J.
    Kaschel, M.
    Kirfel, O.
    Kasper, E.
    Schulze, J.
    APPLIED PHYSICS LETTERS, 2009, 95 (24)
  • [7] PRESSURE DEPENDENCE OF THE CURRENT-VOLTAGE CHARACTERISTICS OF ESAKI DIODES
    MILLER, SL
    NATHAN, MI
    SMITH, AC
    PHYSICAL REVIEW LETTERS, 1960, 4 (02) : 60 - 62
  • [8] A Spin-Polarized Interband-Current Source based upon Staggered-Bandgap Heterostructures
    Zhang, Weidong
    Woolard, Dwight
    Zhao, Peiji
    2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, : 214 - +
  • [9] MODELING OF RESONANT INTERBAND TUNNELING STRUCTURES AS BACK-BACK INTER-DIMENSIONAL ESAKI DIODES
    GILMAN, JMA
    ONEILL, AG
    SUPERLATTICES AND MICROSTRUCTURES, 1993, 14 (2-3) : 129 - 136
  • [10] Ge rich Esaki diodes with high peak to valley current ratios
    Stoffel, M
    Kar, GS
    Schmidt, OG
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2005, 25 (5-8): : 826 - 829