EXCESS AND HUMP CURRENT IN ESAKI DIODES

被引：40

作者：

CLAASSEN, RS

机构：

来源：

关键词：

D O I：

10.1063/1.1777078

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2372 / &

共 28 条

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[3]

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LOGAN, RA ;

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[5]

CLAASSEN RS, 1960, BULL AM PHYS SOC, V5, P406

[6] A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS [J].

ESAKI, L ;

MIYAHARA, Y .

[7]

ESAKI L, 1960, SOLID STATE PHYS, V1, P514

[8]

ESAKI L, 1958, PHYS REV, V109, P602

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FRITZSCHE, H .