INTERBAND-CURRENT THEORY FOR ESAKI DIODES

被引：2

作者：

WUNSCHE, HJ ^{[1
]}

HENNEBERGER, K ^{[1
]}

机构：

[1] HUMBOLDT UNIV,SEKT PHYS,BERLIN,GER DEM REP

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1976年 / 73卷 / 01期

关键词：

D O I：

10.1002/pssb.2220730123

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：245 / 254

页数：10

共 50 条

[41] A STUDY OF EXCESS CURRENT IN AN ESAKI JUNCTION
CHAKRABORTY, PK
BISWAS, JC
JOURNAL OF APPLIED PHYSICS, 1988, 64 (11) : 6357 - 6360
[42] Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities
Rommel, SL
Dillon, TE
Berger, PR
Thompson, PE
Hobart, KD
Lake, R
Seabaugh, AC
IEEE ELECTRON DEVICE LETTERS, 1999, 20 (07) : 329 - 331
[43] INFLUENCE OF TEMPERATURE AND HYDROSTATIC-PRESSURE ON THE INTERBAND CURRENT IN GAAS TUNNEL-DIODES
KALININ, YM
KRIVOROTOV, NP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (02): : 134 - 136
[44] TUNNELING CURRENTS VIA AU LEVELS IN GE ESAKI DIODES
STREETMAN, BG
SAH, CT
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (06): : 1105 - +
[45] GALLIUM ANTIMONIDE ESAKI DIODES FOR HIGH-FREQUENCY APPLICATIONS
BURRUS, CA
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1961, 49 (06): : 1101 - &
[46] Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing
Dashiell, MW
Troeger, RT
Rommel, SL
Adam, TN
Berger, PR
Guedj, C
Kolodzey, J
Seabaugh, AC
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (09) : 1707 - 1714
[47] THEORY OF THE ESAKI DIODE FREQUENCY CONVERTER
PUCEL, RA
SOLID-STATE ELECTRONICS, 1961, 3 (3-4) : 167 - 207
[48] GALLIUM ARSENIDE ESAKI DIODES FOR HIGH-FREQUENCY APPLICATIONS
BURRUS, CA
JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) : 1031 - &
[49] SATURATION POWER FLOW IN A TRANSMISSION LINE LOADED WITH ESAKI DIODES
SCOTT, AC
IRE TRANSACTIONS ON CIRCUIT THEORY, 1962, CT 9 (03): : 284 - &
[50] RESONANT INTERBAND TUNNEL-DIODES
SWEENY, M
XU, JM
APPLIED PHYSICS LETTERS, 1989, 54 (06) : 546 - 548

← 1 2 3 4 5 →