GROWTH OF CARBON-DOPED P-TYPE INXGA1-XAS (0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.53) BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：70

作者：

STOCKMAN, SA ^{[1
]}

HANSON, AW ^{[1
]}

STILLMAN, GE ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 23期

关键词：

D O I：

10.1063/1.106814

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon doping of InxGa1-xAs grown on GaAs and InP substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using CCl4 has been investigated for In mode fractions as high as x=0.53. P-type conduction was obtained over the entire composition range studied, with hole concentrations above 1X10(20) cm-3 for x<0.12, and as high as 1X10(19) cm-3 for In0.53Ga0.53Ga0.47As lattice-matched to InP. These high carbon concentrations were achieved by employing very low V/III ratios and low growth temperatures. The alloy composition was found to be dependent on several growth parameters, including CCl4 partial pressure, V/III ratio, and growth temperature. This may be due to surface reactions (etching) involving chlorine-containing compounds during growth. Samples grown at low temperature (approximately 500-degrees-C) and lattice matched to InP exhibited an increase in hole concentration upon post-growth annealing.

引用

页码：2903 / 2905

页数：3

共 50 条

[41] STRAIN EFFECTS ON GAXIN1-XAS/INP SINGLE QUANTUM WELLS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY WITH 0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1
WANG, TY
STRINGFELLOW, GB
JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) : 344 - 352
[42] TEMPERATURE-DEPENDENT TRANSITION FROM 2-DIMENSIONAL TO 3-DIMENSIONAL GROWTH IN HIGHLY STRAINED INXGA1-XAS/GAAS (0.36-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) SINGLE QUANTUM-WELLS
WANG, SM
ANDERSSON, TG
EKENSTEDT, MJ
APPLIED PHYSICS LETTERS, 1992, 61 (26) : 3139 - 3141
[43] CHARACTERISTICS OF 0.8-MU-M AND 0.2-MU-M GATE LENGTH INXGA1-XAS IN0.52AL0.48AS INP (0.53-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.70) MODULATION-DOPED FIELD-EFFECT TRANSISTORS AT CRYOGENIC TEMPERATURES
LAI, R
BHATTACHARYA, PK
YANG, D
BROCK, TL
ALTEROVITZ, SA
DOWNEY, AN
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (10) : 2206 - 2213
[44] GROWTH AND CHARACTERIZATION OF N-DOPED ZNSXSE1-X (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-0.3) BY MOLECULAR-BEAM EPITAXY
TERAGUCHI, N
HIRATA, S
MOURI, H
TOMOMURA, Y
SUZUKI, A
TAKIGUCHI, H
JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 803 - 806
[45] METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY CD1-XZNXTE (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.27) FILMS
RAJAVEL, D
ZINCK, JJ
APPLIED PHYSICS LETTERS, 1993, 63 (03) : 322 - 324
[46] SPIN SPLITTING IN N-TYPE BI1-XSBX ALLOYS INCLUDING DOPED BISMUTH (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.12)
KOHLER, H
LEISTER, HJ
GENSLER, A
PHYSICAL REVIEW B, 1990, 41 (11): : 7724 - 7733
[47] PHOTOLUMINESCENCE CHARACTERIZATION OF GAXIN1-XAS (0-LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.32) STRAINED QUANTUM-WELLS GROWN ON INP BY CHEMICAL BEAM EPITAXY
UCHIDA, T
UCHIDA, TK
YOKOUCHI, N
MIYAMOTO, T
KOYAMA, F
IGA, K
JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) : 357 - 361
[48] MATERIALS AND DEVICE PROPERTIES OF PSEUDOMORPHIC INXGA1-XAS/AL0.3GA0.7AS/GAAS HIGH ELECTRON-MOBILITY TRANSISTORS (0 LESS-THAN X LESS-THAN 0.5)
SCHWEIZER, T
KOHLER, K
GANSER, P
HULSMANN, A
TASKER, P
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (02): : 109 - 113
[49] VIBRATIONAL PROPERTIES OF SIO AND SIH IN AMORPHOUS SIOX-H FILMS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-2.0) PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
HE, L
INOKUMA, T
KURATA, Y
HASEGAWA, S
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 185 (03) : 249 - 261
[50] SYNTHESIS AND SINGLE-CRYSTAL GROWTH OF COMPOUNDS OF THE TYPE TL3VXTA1-XS4, 0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 1
SHAKERI, V
BUCK, P
ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 1987, 178 (1-4): : 203 - 203

← 1 2 3 4 5 →