GROWTH OF CARBON-DOPED P-TYPE INXGA1-XAS (0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.53) BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：70

作者：

STOCKMAN, SA ^{[1
]}

HANSON, AW ^{[1
]}

STILLMAN, GE ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 23期

关键词：

D O I：

10.1063/1.106814

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon doping of InxGa1-xAs grown on GaAs and InP substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using CCl4 has been investigated for In mode fractions as high as x=0.53. P-type conduction was obtained over the entire composition range studied, with hole concentrations above 1X10(20) cm-3 for x<0.12, and as high as 1X10(19) cm-3 for In0.53Ga0.53Ga0.47As lattice-matched to InP. These high carbon concentrations were achieved by employing very low V/III ratios and low growth temperatures. The alloy composition was found to be dependent on several growth parameters, including CCl4 partial pressure, V/III ratio, and growth temperature. This may be due to surface reactions (etching) involving chlorine-containing compounds during growth. Samples grown at low temperature (approximately 500-degrees-C) and lattice matched to InP exhibited an increase in hole concentration upon post-growth annealing.

引用

页码：2903 / 2905

页数：3

共 50 条

[21] LOW-FIELD AND HIGH-FIELD TRANSPORT-PROPERTIES OF PSEUDOMORPHIC INXGA1-XAS IN0.52AL0.48AS (0.53-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.65) MODULATION-DOPED HETEROSTRUCTURES
HONG, WP
NG, GI
BHATTACHARYA, PK
PAVLIDIS, D
WILLING, S
DAS, B
JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 1945 - 1949
[22] THE INXGA1-XASYP1-Y (0.53-LESS-THAN-X-LESS-THAN-1, 0-LESS-THAN-Y-LESS-THAN-1) COMPOUND SEMICONDUCTOR FOR LD STRUCTURES BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
LIN, W
TU, YK
DAI, TA
HO, WJ
LEE, GY
SHIAO, HP
JOURNAL OF CRYSTAL GROWTH, 1992, 123 (3-4) : 451 - 458
[23] Carbon-doped p-type AlGaAs/InAs superalloy by metalorganic chemical-vapor deposition
Pan, N
Elliott, J
Hendriks, H
Lee, D
Welch, M
JOURNAL OF APPLIED PHYSICS, 1996, 79 (01) : 504 - 507
[24] LIQUID-PHASE EPITAXIAL-GROWTH OF ALXGA1-XAS WITH 0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.85
WU, MC
SU, YK
JOURNAL OF CRYSTAL GROWTH, 1989, 96 (01) : 52 - 58
[25] AN ALGAAS/INXGA1-XAS/ALGAAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.5) PSEUDOMORPHIC HEMT ON GAAS SUBSTRATE USING AN INX/2GA1-X/2AS BUFFER LAYER
MAEZAWA, K
MIZUTANI, T
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (06) : 1416 - 1421
[26] ULTRA-THIN GAXIN1-XAS/INP (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.47) LAYER GROWTH BY CHEMICAL BEAM EPITAXY
YOKOUCHI, N
UCHIDA, TK
UCHIDA, T
MIYAMOTO, T
KOYAMA, F
IGA, K
JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (12) : 1049 - 1052
[27] AUGER RECOMBINATION RATES IN COMPRESSIVELY STRAINED INXGA1-XAS/INGAASP/INP (0.53 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.73) MULTIQUANTUM-WELL LASERS (VOL 5, PG 120, 1993)
DAVIS, L
LAM, Y
NICHOLS, D
SINGH, J
BHATTACHARYA, PK
IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (04) : 485 - 486
[28] CHARACTERIZATION OF GRADED INTERFACE INXGA1-XAS/IN0.52AL0.48AS (0.53-LESS-THAN-X-LESS-THAN-0.70) STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
PENG, CK
SINHA, S
MORKOC, H
JOURNAL OF APPLIED PHYSICS, 1987, 62 (07) : 2880 - 2884
[29] MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1)
BAN, VS
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) : 1473 - &
[30] APPLICATION OF CRITICAL COMPOSITIONAL DIFFERENCE CONCEPT TO THE GROWTH OF LOW DISLOCATION DENSITY (LESS-THAN-104/CM2) INXGA1-XAS (X-LESS-THAN-OR-EQUAL-TO-0.5) ON GAAS
KRISHNAMOORTHY, V
LIN, YW
PARK, RM
JOURNAL OF APPLIED PHYSICS, 1992, 72 (05) : 1752 - 1757

← 1 2 3 4 5 →