CONDUCTION-BAND STRUCTURE OF GAAS AS DETERMINED BY ANGLE-RESOLVED PHOTOEMISSION

被引：5
|
作者：
ZHANG, XD [1 ]
RILEY, JD [1 ]
LECKEY, RCG [1 ]
LEY, L [1 ]
机构：
[1] UNIV ERLANGEN NURNBERG,INST TECH PHYS,W-8520 ERLANGEN,GERMANY
来源：
PHYSICAL REVIEW B | 1993年 / 48卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.48.17077
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Angle-resolved photoemission data have been used to determine the conduction-band structure of GaAs along the GAMMAKX and GAMMADELTAX directions. A structure plot of kinetic energy versus initial-state energy has been used to identify the valence bands involved in the observed transitions. The determination of values of k for the observed transitions was based on theoretical valence bands of GaAs from a linear-muffin-tin-orbital (LMTO) calculation. The experimentally determined final states are in reasonably good agreement with the LMTO conduction bands.
引用
收藏
页码：17077 / 17085
页数：9
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