CONDUCTION-BAND STRUCTURE OF GAAS AS DETERMINED BY ANGLE-RESOLVED PHOTOEMISSION

Angle-resolved photoemission data have been used to determine the conduction-band structure of GaAs along the GAMMAKX and GAMMADELTAX directions. A structure plot of kinetic energy versus initial-state energy has been used to identify the valence bands involved in the observed transitions. The determination of values of k for the observed transitions was based on theoretical valence bands of GaAs from a linear-muffin-tin-orbital (LMTO) calculation. The experimentally determined final states are in reasonably good agreement with the LMTO conduction bands.