OPTICAL AND ELECTRICAL CHARACTERIZATION OF BETA-FESI2 EPITAXIAL THIN-FILMS ON SILICON SUBSTRATES

被引：131
|
作者：
LEFKI, K
MURET, P
CHERIEF, N
CINTI, RC
机构：
[1] Laboratoire d'Etudes des Propriétés Electroniques des Solides, C.N.R.S., 38042 Grenoble Cedex
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 01期
关键词：
D O I：
10.1063/1.347720
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electrical measurements have ben carried out on epitaxial FeSi2 layers on silicon substrates, the silicide thickness being either 180 or 350 angstrom. A direct gap of 0.85 eV was measured by optical absorption. Current-voltage characteristics of mesa-structures Cr/Fe/FeSi2/Si show a p-type semiconductor behavior. Capacitance-voltage and capacitance-temperature data at different frequencies indicate a large response of deep levels of interface states. Admittance spectroscopy yields the activation energy and capture cross of two levels. Finally an energy-band diagram is proposed.
引用
收藏
页码：352 / 357
页数：6
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