ELECTRICAL-PROPERTIES OF BETA-FESI2/SI HETEROJUNCTIONS

被引：42
|
作者：
DIMITRIADIS, CA
机构：
[1] Department of Physics, University of Thessaloniki
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 10期
关键词：
D O I：
10.1063/1.350372
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical properties of heterojunctions of polycrystalline films of beta-FeSi2 grown on n-type single-crystal silicon are investigated. The dark current-voltage and capacitance-voltage characteristics are measured over a wide temperature range. Analysis of the data reveal that multistep tunneling is the current conduction mechanism due to a high density of interface defects.
引用
收藏
页码：5423 / 5426
页数：4
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