CALCULATION OF THE PROFILES OF APPEARING SUB-MICRON ELEMENTS DURING X-RAY-LITHOGRAPHY

被引：0
|
作者：
LABUNOV, VA
SHEPUREV, SY
机构：
来源：
DOKLADY AKADEMII NAUK BELARUSI | 1989年 / 33卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
收藏
页码：215 / 217
页数：3
相关论文
共 50 条
  • [31] X-RAY-LITHOGRAPHY
    GARRETTSON, GA
    NEUKERMANS, AP
    HEWLETT-PACKARD JOURNAL, 1982, 33 (08): : 14 - 18
  • [32] X-RAY-LITHOGRAPHY
    HARRELL, S
    SOLID STATE TECHNOLOGY, 1985, 28 (05) : 111 - 111
  • [33] REDUCTION LENSES FOR SUB-MICRON LITHOGRAPHY
    OMATA, T
    SOLID STATE TECHNOLOGY, 1984, 27 (09) : 173 - 177
  • [34] LITHOGRAPHY FOR A SUB-MICRON CMOS PROCESS
    POPPERT, P
    NOVAK, S
    WRIGHT, P
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 538 : 46 - 50
  • [35] Process conditions in X-ray lithography for the fabrication of devices with sub-micron feature sizes
    Mappes, Timo
    Achenbach, Sven
    Mohr, Juergen
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2007, 13 (3-4): : 355 - 360
  • [36] Process conditions in X-ray lithography for the fabrication of devices with sub-micron feature sizes
    Timo Mappes
    Sven Achenbach
    Juergen Mohr
    Microsystem Technologies, 2007, 13 : 355 - 360
  • [37] HIGH-POWER 13.3-A X-RAY SOURCE FOR SUB-MICRON LITHOGRAPHY
    FAY, B
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1194 - 1199
  • [38] MICRON AND SUB-MICRON LITHOGRAPHY FOR VLSI DEVICE FABRICATION
    VARNELL, GL
    SCANNING ELECTRON MICROSCOPY, 1981, : 343 - 350
  • [39] COMPUTER-SIMULATIONS OF RESIST PROFILES IN X-RAY-LITHOGRAPHY
    HEINRICH, K
    BETZ, H
    HEUBERGER, A
    PONGRATZ, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1254 - 1258
  • [40] STABLE LOW-STRESS TUNGSTEN ABSORBER TECHNOLOGY FOR SUB-HALF-MICRON X-RAY-LITHOGRAPHY
    KOLA, RR
    CELLER, GK
    FRACKOVIAK, J
    JURGENSEN, CW
    TRIMBLE, LE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 3301 - 3305
12345