IONIZATION-ENERGY LOSSES OF RELATIVISTIC POSITRONS PASSING THROUGH A SILICON SINGLE-CRYSTAL AND ELECTRON-EMISSION

被引：0
|
作者：
ADEJSHVILI, DI
BOCHEK, GL
VITKO, VI
GORBENKO, VG
GRISHAEV, IA
ZHEBROVSKIJ, YV
KOVALENKO, GD
KOLESNIKOV, LY
KULIBABA, VI
RUBASHKIN, AL
SHRAMENKO, BI
机构：
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1983年 / 71卷 / 3-4期
关键词：
D O I：
10.1080/00337578308218613
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
Ionization-loss spectra have been measured for 1. 2 GeV positrons transmitted through a silicon single cystal at different angles to the crystal axis. The dependence of the positron-induced electron emission on the silicon crystal orientation is found.
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页码：185 / 189
页数：5
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