IONIZATION-ENERGY LOSSES OF RELATIVISTIC POSITRONS PASSING THROUGH A SILICON SINGLE-CRYSTAL AND ELECTRON-EMISSION

被引：0

作者：

ADEJSHVILI, DI

BOCHEK, GL

VITKO, VI

GORBENKO, VG

GRISHAEV, IA

ZHEBROVSKIJ, YV

KOVALENKO, GD

KOLESNIKOV, LY

KULIBABA, VI

RUBASHKIN, AL

SHRAMENKO, BI

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1983年 / 71卷 / 3-4期

关键词：

D O I：

10.1080/00337578308218613

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Ionization-loss spectra have been measured for 1. 2 GeV positrons transmitted through a silicon single cystal at different angles to the crystal axis. The dependence of the positron-induced electron emission on the silicon crystal orientation is found.

引用

页码：185 / 189

页数：5