OMCVD-GROWN INP/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引:14
|
作者
HAYES, JR
BHAT, R
SCHUMACHER, H
KOZA, M
机构
[1] Bell Communications Research Inc,, Red Bank, NJ, USA, Bell Communications Research Inc, Red Bank, NJ, USA
关键词
CURRENT DENSITIES - CURRENT GAINS - EMITTER-BASE JUNCTION - OMCVD;
D O I
10.1049/el:19870898
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1298 / 1299
页数:2
相关论文
共 50 条
  • [31] SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS
    STORK, JMC
    PATTON, GL
    HARAME, DL
    MEYERSON, BS
    IYER, SS
    GANIN, E
    CRABBE, EF
    1989 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1989, : 1 - 4
  • [32] PERFORMANCE TRADEOFFS IN ALINAS/GAINAS SINGLE-HETEROJUNCTION AND DOUBLE-HETEROJUNCTION NPN HETEROJUNCTION BIPOLAR-TRANSISTORS
    FARLEY, CW
    HIGGINS, JA
    HO, WJ
    MCDERMOTT, BT
    CHANG, MF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 1023 - 1025
  • [33] MICROWAVE-POWER INP/INGAAS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS
    SONG, JI
    HONG, WP
    BHAT, R
    CHOUGH, KB
    HAYES, JR
    SUGENG, B
    WEI, CJ
    HWANG, JCM
    ELECTRONICS LETTERS, 1993, 29 (08) : 724 - 725
  • [34] BE DIFFUSION AT THE EMITTER-BASE JUNCTION OF GRADED ALINAS/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    METZGER, RA
    HAFIZI, M
    WILSON, RG
    STANCHINA, WE
    JENSEN, JF
    MCCRAY, LG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 2347 - 2350
  • [35] SELF-ALIGNED A1INAS-GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND CIRCUITS
    MISHRA, UK
    JENSEN, JF
    RENSCH, DB
    BROWN, AS
    STANCHINA, WE
    TREW, RJ
    PIERCE, MW
    KARGODORIAN, TV
    IEEE ELECTRON DEVICE LETTERS, 1989, 10 (10) : 467 - 469
  • [36] INP/IN0.53GA0.47AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A CARBON-DOPED BASE GROWN BY MOCVD
    HANSON, AW
    STOCKMAN, SA
    STILLMAN, GE
    IEEE ELECTRON DEVICE LETTERS, 1992, 13 (10) : 504 - 506
  • [37] MAGNESIUM AS P DOPANT IN INGAAS/INP HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    DILDEY, F
    SCHIER, M
    EBBINGHAUS, G
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (04) : 1193 - 1195
  • [38] HIGH-SPEED CARBON-DOPED-BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOCVD
    ITO, H
    YAMAHATA, S
    SHIGEKAWA, N
    KURISHIMA, K
    MATSUOKA, Y
    ELECTRONICS LETTERS, 1995, 31 (24) : 2128 - 2130
  • [39] NPN AND PNP GALNP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOCVD
    KAWAI, H
    KOBAYASHI, T
    NAKAMURA, F
    TAIRA, K
    ELECTRONICS LETTERS, 1989, 25 (09) : 609 - 610
  • [40] GAINAS-GAINASP-INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH VERY THIN BASE (150-A) GROWN BY CHEMICAL BEAM EPITAXY
    TSANG, WT
    LEVI, AFJ
    BURKHARDT, EG
    APPLIED PHYSICS LETTERS, 1988, 53 (11) : 983 - 985