OMCVD-GROWN INP/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：14

作者：

HAYES, JR

BHAT, R

SCHUMACHER, H

KOZA, M

机构：

[1] Bell Communications Research Inc,, Red Bank, NJ, USA, Bell Communications Research Inc, Red Bank, NJ, USA

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 24期

关键词：

CURRENT DENSITIES - CURRENT GAINS - EMITTER-BASE JUNCTION - OMCVD;

D O I：

10.1049/el:19870898

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1298 / 1299

页数：2

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