LOW-TEMPERATURE VUV ENHANCED GROWTH OF THIN SILICON DIOXIDE FILMS

被引：13

作者：

PATEL, P ^{[1
]}

BOYD, IW ^{[1
]}

机构：

[1] UNIV LONDON UNIV COLL,DEPT ELECTR & ELECT ENGN,LONDON WC1E 7JE,ENGLAND

来源：

APPLIED SURFACE SCIENCE | 1990年 / 46卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(90)90169-Z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper we shall describe a new VUV photo/reduced plasma enhanced oxidation system to grow thin (<50 Å) silicon dioxide films at low temperatures (< 400 °C). The wavelength dependence of the oxidation rate has been investigated. Since the photon energies used were greater than the silicon dioxide band gap, their effect on the flat band voltage and fixed oxide charge has also been studied using previously characterised thermally grown oxides. © 1990.

引用

页码：352 / 356

页数：5

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