共 50 条
- [31] Overview of trench gated MOS-controlled bipolar semiconductor power devices PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 : 444 - 449
- [32] Formalised method for effecting multiple modes in single MOS gated power devices IEE Proc Circuits Devices Syst, 4 (203-209):
- [33] Active Thermal Control for Reliability Improvement of MOS-gated Power Devices IECON 2017 - 43RD ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, 2017, : 7935 - 7940
- [35] V-MOS MAKES GAINS IN POWER DEVICES AT GENERAL ELECTRIC, IN FREQUENCY AT TEKTRONIX ELECTRONICS, 1978, 51 (23): : 40 - 41
- [36] Optimization and Capacitance Characteristics of 1 500 V Super Junction Power MOS Devices Tien Tzu Hsueh Pao/Acta Electronica Sinica, 2024, 52 (07): : 2271 - 2278
- [37] Electron irradiation efects on static (100) and (111) power MOS-gated devices 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, 2000, : 251 - 254
- [40] A new generation of power unipolar devices:: the concept of the FLoating islands MOS transistor (FLIMOST) 12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS, 2000, : 69 - 72