A new generation of power unipolar devices:: the concept of the FLoating islands MOS transistor (FLIMOST)

被引：33

作者：

Cézac, N ^{[1
]}

Morancho, F ^{[1
]}

Rossel, P ^{[1
]}

Tranduc, H ^{[1
]}

Peyre-Lavigne, A ^{[1
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse 4, France

来源：

12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ISPSD.2000.856775

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a new vertical DMOS Transistor is proposed, in which floating islands are placed in the drift region. This new structure, called "FLIMOST", exhibits improved on-state performance when compared to the conventional VDMOST. For instance, for a breakdown voltage of 900 Volts, the performance is strongly improved in term of specific on-resistance (reduction of about 70% relative to the conventional structure and 40% relative to the silicon limit). Moreover the specific on-resistance theoretical limits of FLIMOST family are determined and compared to those of the "Superjonction" MOS Transistor family : this comparison shows the strong interest of the FLIMOSFET in the 200 V - 1000 V breakdown voltage range.

引用

页码：69 / 72

页数：4

共 50 条

[1] A new generation of power MOSFET based on the concept of "Floating Islands"
Cézac, N
Morancho, F
Rossel, P
Tranduc, H
Peyre-Lavigne, A
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2000, 10 (03): : 203 - 209
[2] A new generation of power lateral and vertical floating islands MOS structures
Morancho, F
Cézac, N
Galadia, A
Zitouni, M
Rossel, P
Peyre-Lavigne, A
MICROELECTRONICS JOURNAL, 2001, 32 (5-6): : 509 - 516
[3] THE ALDMOST - A NEW POWER MOS-TRANSISTOR
HABIB, SED
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) : 257 - 259
[4] ALDMOST: A NEW POWER MOS TRANSISTOR.
Habib, Serag E.-D.
Electron device letters, 1987, EDL-8 (06): : 257 - 259
[5] Unipolar SIC devices - Latest achievements on the way to a new generation of high voltage power semiconductors
Friedrichs, Peter
IPEMC 2006: CES/IEEE 5TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS, 2006, : 132 - 136
[6] Exploring new logic devices: Unlocking potential with floating-gate transistor
Lee, Chungryeol
Choi, Junhwan
Lee, Changhyeon
Yoo, Hocheon
Im, Sung Gap
APPLIED PHYSICS REVIEWS, 2024, 11 (03):
[7] The new generation of power semiconductor devices
Amaratunga, GAJ
Udrea, F
CAS '96 PROCEEDINGS - 1996 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 19TH EDITION, VOLS 1 AND 2, 1996, : 469 - 478
[8] The test study on hydrodynamic characteristics of floating tidal power generation devices
Ma, Y. (mayong02@hrbeu.edu.cn), 1600, Huazhong University of Science and Technology (40):
[9] The ETO-IGBT-A Dual-Concept of Thyristor and Transistor Power Devices
Teichrib, Jakob
De Doncker, Rik W.
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2021, 57 (04) : 3948 - 3955
[10] The ETO-IGBT - A Dual-Concept of Thyristor and Transistor Power Devices
Teichrib, Jakob
De Doncker, Rik W.
2019 21ST EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE '19 ECCE EUROPE), 2019,

← 1 2 3 4 5 →