A new generation of power unipolar devices:: the concept of the FLoating islands MOS transistor (FLIMOST)

被引：33

作者：

Cézac, N ^{[1
]}

Morancho, F ^{[1
]}

Rossel, P ^{[1
]}

Tranduc, H ^{[1
]}

Peyre-Lavigne, A ^{[1
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse 4, France

来源：

12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ISPSD.2000.856775

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a new vertical DMOS Transistor is proposed, in which floating islands are placed in the drift region. This new structure, called "FLIMOST", exhibits improved on-state performance when compared to the conventional VDMOST. For instance, for a breakdown voltage of 900 Volts, the performance is strongly improved in term of specific on-resistance (reduction of about 70% relative to the conventional structure and 40% relative to the silicon limit). Moreover the specific on-resistance theoretical limits of FLIMOST family are determined and compared to those of the "Superjonction" MOS Transistor family : this comparison shows the strong interest of the FLIMOSFET in the 200 V - 1000 V breakdown voltage range.

引用

页码：69 / 72

页数：4

共 50 条

[21] An ultra-low-voltage ultra-low-power weak inversion composite MOS transistor: Concept and applications
Ferreira, Luis H. C.
Pimenta, Tales C.
Moreno, Robson L.
IEICE TRANSACTIONS ON ELECTRONICS, 2008, E91C (04) : 662 - 665
[22] Application of advanced metal-oxide-semiconductor transistor in next generation, silicon resonant tunneling MOS transistor, to new logic circuit
Matsuo, N
Kihara, H
Takami, Y
SOLID-STATE ELECTRONICS, 2003, 47 (11) : 1969 - 1972
[23] High Performance RF LDMOS Power Transistor for the New Generation Base Station
Hou, Fucheng
Zeng, Dajie
2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2014,
[24] A new analytic method to design multiple floating field limiting rings of power devices
He, Jin
Chan, Mansun
Zhang, Xing
Wang, Yangyuan
SOLID-STATE ELECTRONICS, 2006, 50 (7-8) : 1375 - 1381
[25] THE MINORITY-CARRIER INJECTION CONTROLLED FIELD-EFFECT TRANSISTOR (MICFET) - A NEW MOS-GATED POWER TRANSISTOR STRUCTURE
AJIT, JS
BALIGA, BJ
TANDON, S
REISMAN, A
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (08) : 1954 - 1960
[26] Folded-Accumulation LDMOST: New Power MOS Transistor With Very Low Specific On-Resistance
Duan, Baoxing
Yang, Yintang
Zhang, Bo
Hong, Xufeng
IEEE ELECTRON DEVICE LETTERS, 2009, 30 (12) : 1329 - 1331
[27] The accumulation channel driven bipolar transistor (ACBT): A new MOS-gated semiconductor power device
Thapar, N
Baliga, BJ
ISPSD '97: 1997 IEEE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 1997, : 201 - 204
[28] THE INSULATED GATE TRANSISTOR - A NEW 3-TERMINAL MOS-CONTROLLED BIPOLAR POWER DEVICE
BALIGA, BJ
ADLER, MS
LOVE, RP
GRAY, PV
ZOMMER, ND
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) : 821 - 828
[29] INSULATED GATE P-I-N TRANSISTOR - A NEW MOS CONTROLLED SWITCHING POWER DEVICE
HUANG, AQ
IEEE ELECTRON DEVICE LETTERS, 1995, 16 (09) : 408 - 410
[30] INSULATED GATE TRANSISTOR: A NEW THREE-TERMINAL MOS-CONTROLLED BIPOLAR POWER DEVICE.
Baliga, Jayant
Adler, Michael S.
Love, Robert P.
Gray Peter V.
Zommer, Nathan D.
IEEE Transactions on Electron Devices, 1984, ED-31 (06) : 821 - 828

← 1 2 3 4 5 →