NI AND PD SCHOTTKY BARRIERS ON GAAS(110)

被引:4
|
作者
WILLIAMS, MD [1 ]
KENDELEWICZ, T [1 ]
NEWMAN, N [1 ]
LINDAU, I [1 ]
SPICER, WE [1 ]
机构
[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
关键词
D O I
10.1116/1.573368
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:977 / 978
页数:2
相关论文
共 50 条
  • [41] APPLICATION OF HIGH-ENERGY ION CHANNELING TO GAAS(110), AU-GAAS(110) AND PD-GAAS(110)
    GOSSMANN, HJ
    GIBSON, WM
    SURFACE SCIENCE, 1984, 139 (01) : 239 - 259
  • [42] SPUTTERED TIW-AU SCHOTTKY BARRIERS ON GAAS
    WEINMAN, LS
    JAMISON, SA
    HELIX, MJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 838 - 840
  • [43] PROPERTIES OF AU-W-GAAS SCHOTTKY BARRIERS
    MORKOC, H
    CHO, AY
    STANCHAK, CM
    DRUMMOND, TJ
    THIN SOLID FILMS, 1980, 69 (03) : 295 - 299
  • [44] RAPID THERMAL ANNEALING OF MIS GAAS SCHOTTKY BARRIERS
    EFTEKHARI, G
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 127 (02): : 573 - 576
  • [45] UNPINNED GAAS SCHOTTKY BARRIERS WITH AN EPITAXIAL SILICON LAYER
    COSTA, JC
    MILLER, TJ
    WILLIAMSON, F
    NATHAN, MI
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (04) : 2173 - 2184
  • [46] METAL ON GAAS - FROM SCHOTTKY BARRIERS TO OHMIC CONTACTS
    PERFETTI, S
    CARLUCCIO, R
    LANZIERI, C
    CETRONIO, A
    COLUZZA, C
    APPLIED SURFACE SCIENCE, 1992, 56-8 : 335 - 340
  • [47] HIGH-PERFORMANCE NI-PD-GAAS SCHOTTKY-BARRIER DIODES MADE BY ELECTROPLATING
    NARA, A
    KONDO, H
    ISHII, T
    IKEGAWA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 179 - 184
  • [48] A COMPARISON OF PD SCHOTTKY CONTACTS ON INP, GAAS AND SI
    HOKELEK, E
    ROBINSON, GY
    SOLID-STATE ELECTRONICS, 1981, 24 (02) : 99 - 103
  • [49] A hydrogen sensitive Pd/GaAs Schottky diode sensor
    Cheng, SY
    MATERIALS CHEMISTRY AND PHYSICS, 2003, 78 (02) : 525 - 528
  • [50] SCHOTTKY BARRIERS ON ATOMICALLY CLEAN N-INP (110)
    KENDELEWICZ, T
    NEWMAN, N
    LIST, RS
    LINDAU, I
    SPICER, WE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1206 - 1211