NI AND PD SCHOTTKY BARRIERS ON GAAS(110)

被引：4

作者：

WILLIAMS, MD ^{[1
]}

KENDELEWICZ, T ^{[1
]}

NEWMAN, N ^{[1
]}

LINDAU, I ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573368

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：977 / 978

页数：2

共 50 条

[31] THE BEHAVIOR OF SCHOTTKY BARRIERS TO GAAS AS A FUNCTION OF ANNEALING TEMPERATURE
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[32] CHARACTERISTICS OF TIN N-GAAS SCHOTTKY BARRIERS
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[33] THERMIONIC EMISSION IN AU-GAAS SCHOTTKY BARRIERS
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[34] ELECTRICAL-PROPERTIES OF METAL - GAAS SCHOTTKY BARRIERS
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SURFACE SCIENCE, 1977, 64 (01) : 323 - 333
[35] MO/GAAS SCHOTTKY BARRIERS PREPARED BY DC SPUTTERING
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[36] Schottky barriers on GaAs: Screened pinning at defect levels
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[37] CAPACITANCE MEASUREMENTS ON AU-GAAS SCHOTTKY BARRIERS
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[38] Equilibrium structure and Schottky barriers at ErAs/GaAs interfaces
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[39] ON THE RICHARDSON CONSTANT OF INTIMATE METAL GAAS SCHOTTKY BARRIERS
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[40] A STUDY OF AU/GAAS SCHOTTKY BARRIERS WITH A CESIATED INTERFACE
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