Development of the RF Ion Sources for Focused Ion Beam Accelerators

被引：0
|
作者：
Voznyi, V. [1 ]
Miroshnichenko, V. [1 ]
Mordyk, S. [1 ]
Shulha, D. [1 ]
Storizhko, V. [1 ]
Tokman, V. [1 ]
机构：
[1] Natl Acad Sci, Inst Appl Phys, 58 Petropavlovskaya Str, UA-40000 Sumy, Ukraine
来源：
JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2013年 / 5卷 / 04期
关键词：
RF ion source; Plasma; Inductive; Helicon; Multicusp; Sputtering;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The paper presents the results of investigations of ion sources developed in the IAP of NAS of Ukraine for generation of high brightness ion beams with small energy spread. A series of RF ion sources operated at the frequency of 27.12 MHz were studied: the inductive RF ion source, the helicon ion source, the multicusp RF ion source, and the sputter type RF source of metal ions. A global model and transformer model were applied for calculation of RF source plasma parameters. Ion energy spread, ion mass, and ion current density of some sources were measured in the wide range of RF power, extraction voltage and gas pressure.
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页数：6
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