FREQUENCY-DEPENDENCE OF SURFACE CYCLOTRON-RESONANCE IN SI

被引：36

作者：

ABSTREITER, G

KOCH, JF

GOY, P

COUDER, Y

机构：

[1] TECH UNIV MUNCHEN,DEPT PHYS,D-8046 GARCHING,BUNDES REPUBLIK

[2] ECOLE NORM SUPER,F-75231 PARIS 5,FRANCE

来源：

PHYSICAL REVIEW B | 1976年 / 14卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.14.2494

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2494 / 2497

页数：4

共 19 条

[1]

ABSTREITER G, 1976, PHYS REV B, V14, P2480, DOI 10.1103/PhysRevB.14.2480

[2] CYCLOTRON-RESONANCE OF ELECTRONS IN AN INVERSION LAYER ON SI [J].

ABSTREITER, G ;

KNESCHAUREK, P ;

KOTTHAUS, JP ;

KOCH, JF .

PHYSICAL REVIEW LETTERS, 1974, 32 (03) :104-107

[3] FAR-INFRARED CYCLOTRON-RESONANCE IN INVERSION LAYER OF SILICON [J].

ALLEN, SJ ;

TSUI, DC ;

DALTON, JV .

PHYSICAL REVIEW LETTERS, 1974, 32 (03) :107-110

[4] THEORY OF CYCLOTRON-RESONANCE LINESHAPE IN A 2-DIMENSIONAL ELECTRON-SYSTEM [J].

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1975, 38 (04) :989-997

[5]

ANDO T, 1974, 12TH P INT C PHYS SE, P724

[6] SURFACE QUANTUM OSCILLATIONS IN (100) INVERSION LAYERS UNDER UNIAXIAL STRESS [J].

EISELE, I ;

GESCH, H ;

DORDA, G .

SOLID STATE COMMUNICATIONS, 1976, 18 (06) :743-746

[7]

Kennedy T. A., 1975, Critical Reviews in Solid State Sciences, V5, P391, DOI 10.1080/10408437508243500

[8] LINESHAPE DISTORTIONS IN FIR CYCLOTRON-RESONANCE OF MOS STRUCTURES [J].

KENNEDY, TA ;

WAGNER, RJ ;

MCCOMBE, BD ;

QUINN, JJ .

SOLID STATE COMMUNICATIONS, 1976, 18 (03) :275-278

[9] FREQUENCY-DEPENDENT CYCLOTRON EFFECTIVE MASSES IN SI INVERSION LAYERS [J].

KENNEDY, TA ;

WAGNER, RJ ;

MCCOMBE, BD .

PHYSICAL REVIEW LETTERS, 1975, 35 (15) :1031-1034

[10] CYCLOTRON RESONANCE AND DE HAAS-VAN ALPHEN OSCILLATIONS OF AN INTERACTING ELECTRON GAS [J].

KOHN, W .

PHYSICAL REVIEW, 1961, 123 (04) :1242-&

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