LINESHAPE DISTORTIONS IN FIR CYCLOTRON-RESONANCE OF MOS STRUCTURES

被引：37

作者：

KENNEDY, TA ^{[1
]}

WAGNER, RJ ^{[1
]}

MCCOMBE, BD ^{[1
]}

QUINN, JJ ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

SOLID STATE COMMUNICATIONS | 1976年 / 18卷 / 03期

关键词：

D O I：

10.1016/0038-1098(76)90001-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：275 / 278

页数：4

共 10 条

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[2] FAR-INFRARED CYCLOTRON-RESONANCE IN INVERSION LAYER OF SILICON [J].

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[4]

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[6] CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE [J].

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[7] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J].

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STILES, PJ .

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[8]

KENNEDY TA, TO BE PUBLISHED

[9] ELECTRON-ELECTRON INTERACTIONS CONTINUOUSLY VARIABLE IN RANGE 2.1 GREATER THAN RS GREATER THAN 0.9 [J].

SMITH, JL ;

STILES, PJ .

PHYSICAL REVIEW LETTERS, 1972, 29 (02) :102-+

[10]

STANNARD JE, 1974, JUN P INT C SUBM WAV, P91

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