FAR-INFRARED CYCLOTRON-RESONANCE IN INVERSION LAYER OF SILICON

被引:84
作者
ALLEN, SJ [1 ]
TSUI, DC [1 ]
DALTON, JV [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1103/PhysRevLett.32.107
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:107 / 110
页数:4
相关论文
共 11 条
[1]  
ANDO T, 1972, 11 P INT C PHYS SEM, V1, P294
[2]   TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].
FANG, FF ;
FOWLER, AB .
PHYSICAL REVIEW, 1968, 169 (03) :619-+
[3]  
GREENE RF, 1969, MOLECULAR PROCESSES
[4]   CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND [J].
HENSEL, JC ;
HASEGAWA, H ;
NAKAYAMA, M .
PHYSICAL REVIEW, 1965, 138 (1A) :A225-&
[5]   G FACTOR OF 2-DIMENSIONAL INTERACTING ELECTRON GAS [J].
JANAK, JF .
PHYSICAL REVIEW, 1969, 178 (03) :1416-&
[6]   CYCLOTRON RESONANCE AND DE HAAS-VAN ALPHEN OSCILLATIONS OF AN INTERACTING ELECTRON GAS [J].
KOHN, W .
PHYSICAL REVIEW, 1961, 123 (04) :1242-&
[7]   EXPERIMENTAL STUDY OF OSCILLATORY VALUES OF G] OF A 2-DIMENSIONAL ELECTRON-GAS [J].
LAKHANI, AA ;
STILES, PJ .
PHYSICAL REVIEW LETTERS, 1973, 31 (01) :25-28
[8]   TRANSPORT PHENOMENA IN SIMPLE METALS [J].
PRANGE, RE ;
SACHS, A .
PHYSICAL REVIEW, 1967, 158 (03) :672-&
[9]   ELECTRON-ELECTRON INTERACTIONS CONTINUOUSLY VARIABLE IN RANGE 2.1 GREATER THAN RS GREATER THAN 0.9 [J].
SMITH, JL ;
STILES, PJ .
PHYSICAL REVIEW LETTERS, 1972, 29 (02) :102-+
[10]   PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].
STERN, F ;
HOWARD, WE .
PHYSICAL REVIEW, 1967, 163 (03) :816-&