ANALYSIS OF SURFACE-STATES EMPLOYING ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY

被引：0
|
作者：
PYUN, CH [1 ]
PARK, SM [1 ]
机构：
[1] UNIV NEW MEXICO,DEPT CHEM,ALBUQUERQUE,NM 87131
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1984年 / 187卷 / APR期
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：45 / ANYL
相关论文
共 50 条
  • [21] CAPACITANCE TRANSIENT SPECTROSCOPY OF STATES LOCALIZED AT DISLOCATIONS
    SCHROTER, W
    SEIBT, M
    JOURNAL DE PHYSIQUE, 1983, 44 (NC-4): : 329 - 337
  • [22] GAP STATES IN PHOSPHORUS-DOPED AMORPHOUS-SILICON STUDIED BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY
    OKUSHI, H
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (01): : 33 - 57
  • [23] Extended defect states of Ge/Si quantum dots using optical isothermal capacitance transient spectroscopy
    Kwak, D. W.
    Park, C. J.
    Lee, Y. H.
    Kim, W. S.
    Cho, H. Y.
    NANOTECHNOLOGY, 2009, 20 (05)
  • [24] SURFACE PHOTOVOLTAGE SPECTROSCOPY OF SURFACE-STATES ON INDIUM-PHOSPHIDE
    BYUN, Y
    WESSELS, BW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C142 - C142
  • [25] SURFACE PHOTOVOLTAGE SPECTROSCOPY OF SURFACE-STATES ON INDIUM-PHOSPHIDE
    BYUN, Y
    WESSELS, BW
    APPLIED PHYSICS LETTERS, 1988, 52 (16) : 1352 - 1354
  • [26] A CAPACITANCE RELAXATION METHOD FOR STUDYING SURFACE-STATES AT THE SEMICONDUCTOR LIQUID JUNCTION
    KOBAYASHI, K
    OKAMOTO, S
    SUKIGARA, M
    JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1987, 225 (1-2): : 79 - 92
  • [27] INFLUENCE OF GENERATION OF MINORITY-CARRIERS ON CAPACITANCE SPECTROSCOPY OF SURFACE-STATES IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
    LEBEDEV, AA
    ECKE, W
    YUFEREV, VS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (10): : 1100 - 1103
  • [28] PHOTOELECTRON-SPECTROSCOPY OF SURFACE-STATES ON SEMICONDUCTOR SURFACES
    HANSSON, GV
    UHRBERG, RIG
    SURFACE SCIENCE REPORTS, 1988, 9 (5-6) : 197 - 292
  • [29] SPECTROSCOPY OF SURFACE-STATES AT A SEMICONDUCTOR-SEMICONDUCTOR CONTACT
    PRIKHODKO, VG
    ZHDAN, AG
    GULYAEV, IB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (09): : 1073 - 1074
  • [30] Differential isothermal capacitance transient spectroscopy for the studies of deep levels in semiconductors
    Suno, K
    Yoshino, J
    Okamoto, Y
    Morimoto, J
    Miyakawa, T
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1997, 68 (05): : 2116 - 2120
12345