首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
BASIC PROPERTIES OF PLASMA-DEPOSITED MU-C-SI
被引:0
|
作者
:
TANAKA, K
论文数:
0
引用数:
0
h-index:
0
TANAKA, K
MATSUDA, A
论文数:
0
引用数:
0
h-index:
0
MATSUDA, A
机构
:
来源
:
JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS
|
1983年
/ 6卷
关键词
:
D O I
:
暂无
中图分类号
:
TP3 [计算技术、计算机技术];
学科分类号
:
0812 ;
摘要
:
引用
收藏
页码:161 / 172
页数:12
相关论文
共 50 条
[21]
PROPERTIES OF PLASMA-DEPOSITED SILICON OXYNITRIDE FILMS
TAKASAKI, K
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,KANAGAWA 211,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,KANAGAWA 211,JAPAN
TAKASAKI, K
KOYAMA, K
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,KANAGAWA 211,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,KANAGAWA 211,JAPAN
KOYAMA, K
TAKAGI, M
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,KANAGAWA 211,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,KANAGAWA 211,JAPAN
TAKAGI, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(08)
: C372
-
C372
[22]
PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE
STEIN, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
STEIN, HJ
WELLS, VA
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
WELLS, VA
HAMPY, RE
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
HAMPY, RE
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(03)
: C143
-
C143
[23]
SUBSTRATE DEPENDENCE OF ELECTRONIC AND STRUCTURAL-PROPERTIES OF PLASMA-DEPOSITED A-SI-H
KNIGHTS, JC
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
KNIGHTS, JC
STREET, RA
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
STREET, RA
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY,
1980,
25
(03):
: 294
-
294
[24]
Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices
del Prado, A
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Complutense Madrid, Dept Fis Aplicada 3, Madrid 28040, Spain
Univ Complutense Madrid, Dept Fis Aplicada 3, Madrid 28040, Spain
del Prado, A
San Andrés, E
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Complutense Madrid, Dept Fis Aplicada 3, Madrid 28040, Spain
San Andrés, E
Mártil, I
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Complutense Madrid, Dept Fis Aplicada 3, Madrid 28040, Spain
Mártil, I
González-Díaz, G
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Complutense Madrid, Dept Fis Aplicada 3, Madrid 28040, Spain
González-Díaz, G
Kliefoth, K
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Complutense Madrid, Dept Fis Aplicada 3, Madrid 28040, Spain
Kliefoth, K
Füssel, W
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Complutense Madrid, Dept Fis Aplicada 3, Madrid 28040, Spain
Füssel, W
SEMICONDUCTOR SCIENCE AND TECHNOLOGY,
2004,
19
(02)
: 133
-
141
[25]
FABRICATION AND PERFORMANCE OF THIN-FILM TRANSISTORS, TFTS, INCORPORATING DOPED MU-C-SI SOURCE AND DRAIN CONTACTS, AND BORON-COMPENSATED MU-C-SI CHANNEL LAYERS
HE, SS
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV, DEPT ELECT & COMP ENGN, RALEIGH, NC 27695 USA
N CAROLINA STATE UNIV, DEPT ELECT & COMP ENGN, RALEIGH, NC 27695 USA
HE, SS
WILLIAMS, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV, DEPT ELECT & COMP ENGN, RALEIGH, NC 27695 USA
N CAROLINA STATE UNIV, DEPT ELECT & COMP ENGN, RALEIGH, NC 27695 USA
WILLIAMS, MJ
STEPHENS, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV, DEPT ELECT & COMP ENGN, RALEIGH, NC 27695 USA
N CAROLINA STATE UNIV, DEPT ELECT & COMP ENGN, RALEIGH, NC 27695 USA
STEPHENS, DJ
LUCOVSKY, G
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV, DEPT ELECT & COMP ENGN, RALEIGH, NC 27695 USA
N CAROLINA STATE UNIV, DEPT ELECT & COMP ENGN, RALEIGH, NC 27695 USA
LUCOVSKY, G
JOURNAL OF NON-CRYSTALLINE SOLIDS,
1993,
166
: 731
-
734
[26]
ANALYSIS OF SI-H IN PLASMA-DEPOSITED FILM BY FTIR
NISHIMOTO, A
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,KITAITAMI WORKS,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECT CORP,KITAITAMI WORKS,ITAMI,HYOGO 664,JAPAN
NISHIMOTO, A
JINTATE, S
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,KITAITAMI WORKS,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECT CORP,KITAITAMI WORKS,ITAMI,HYOGO 664,JAPAN
JINTATE, S
NISHIMURA, I
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,KITAITAMI WORKS,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECT CORP,KITAITAMI WORKS,ITAMI,HYOGO 664,JAPAN
NISHIMURA, I
YASUOKA, A
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,KITAITAMI WORKS,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECT CORP,KITAITAMI WORKS,ITAMI,HYOGO 664,JAPAN
YASUOKA, A
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(08)
: C393
-
C393
[27]
THE DIFFUSION KINETICS OF SI IN PLASMA-DEPOSITED SIO2
NESBIT, LA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV GEN TECHNOL,ESSEX JUNCTION,VT 05452
IBM CORP,DIV GEN TECHNOL,ESSEX JUNCTION,VT 05452
NESBIT, LA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(03)
: C105
-
C105
[28]
Plasma-deposited a-C(N):H films
Franceschini, DF
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Fed Fluminense, Inst Fis, BR-24210340 Niteroi, RJ, Brazil
Univ Fed Fluminense, Inst Fis, BR-24210340 Niteroi, RJ, Brazil
Franceschini, DF
BRAZILIAN JOURNAL OF PHYSICS,
2000,
30
(03)
: 517
-
526
[29]
PHOTOELECTRONIC PROPERTIES OF PLASMA-DEPOSITED SILICON-OXIDE
MORT, J
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,WEBSTER,NY 14580
XEROX CORP,WEBSTER,NY 14580
MORT, J
CARASCO, F
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,WEBSTER,NY 14580
XEROX CORP,WEBSTER,NY 14580
CARASCO, F
JANSEN, F
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,WEBSTER,NY 14580
XEROX CORP,WEBSTER,NY 14580
JANSEN, F
GRAMMATICA, S
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,WEBSTER,NY 14580
XEROX CORP,WEBSTER,NY 14580
GRAMMATICA, S
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1985,
132
(08)
: C351
-
C351
[30]
ELECTRONIC-STRUCTURE OF PLASMA-DEPOSITED AMORPHOUS SI-C ALLOY-FILMS
TYCZKOWSKI, J
论文数:
0
引用数:
0
h-index:
0
TYCZKOWSKI, J
THIN SOLID FILMS,
1989,
168
(02)
: 175
-
184
←
1
2
3
4
5
→