共 50 条
- [31] FORMATION OF P-N-JUNCTIONS AND OHMIC CONTACTS WITH GAAS BY LASER SOLID-PHASE DIFFUSION KVANTOVAYA ELEKTRONIKA, 1995, 22 (01): : 95 - 96
- [32] SINGULARITIES IN THE DEPENDENCES OF THE MOBILITY AND QUANTUM EFFICIENCY OF THE PHOTO-LUMINESCENCE ON THE COMPOSITION OF GAAS1-XSBX(0.01 LESS THAN X LESS THAN 0.13) SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (11): : 1330 - 1332
- [33] INFLUENCE OF A1 POSTIMPLANTATION ON P-N-JUNCTIONS IN GALLIUM-PHOSPHIDE PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (02): : K153 - K156
- [34] p-n JUNCTIONS IN GaAs-GaSb SOLID SOLUTIONS. Soviet physics. Semiconductors, 1982, 16 (10): : 1179 - 1182
- [35] CURRENT TRANSITION MECHANISM IN THE DIFFUSION P-N-JUNCTIONS ON THE GEXSI1-X SOLID-SOLUTION BASIS IZVESTIYA AKADEMII NAUK AZERBAIDZHANSKOI SSR SERIYA FIZIKO-TEKHNICHESKIKH I MATEMATICHESKIKH NAUK, 1982, (02): : 89 - 92
- [36] INFLUENCE OF MAGNETIC-FIELDS ON MICROPLASMA INSTABILITY OF CURRENT IN DIFFUSED SILICON P-N-JUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (09): : 1167 - 1167
- [37] INFLUENCE OF REVERSE VOLTAGE ON TRANSMISSION OF LIGHT AND ON PHOTOSENSITIVITY OF GAAS P-N JUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (07): : 837 - &
- [38] INVESTIGATION OF TUNNEL BREAKDOWN AND PHOTOELECTRIC PROPERTIES OF REVERSE-BIASED P-N-JUNCTIONS IN ALXGA1-XAS AND GAAS1-XPX SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (08): : 1247 - 1251
- [39] PHOTO-LUMINESCENCE OF GAAS1-XSBX(0 LESS-THAN X LESS-THAN 0.01)SOLID SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (09): : 1076 - 1078