PROPERTIES OF AL2O3 THIN-FILMS PREPARED BY ION-ASSISTED EVAPORATION

被引:8
|
作者
KUBLER, W
机构
[1] Institut für Technologie der Elektrotechnik, Universität Karlsruhe, 7500 Karlsruhe
关键词
D O I
10.1016/0040-6090(91)90007-K
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Al2O3 films were produced by bombardment with oxygen ions during evaporation in a conventional electron beam evaporation system. Contrary to films produced without ion bombardment but otherwise identical parameters, these Al2O3 films exhibited considerably improved dielectric properties. The improvements can be explained by a significantly increased homogeneity and a raised density of the Al2O3 films.
引用
收藏
页码:247 / 257
页数:11
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