PROPERTIES OF AL2O3 THIN-FILMS PREPARED BY ION-ASSISTED EVAPORATION

被引：8
|
作者：
KUBLER, W
机构：
[1] Institut für Technologie der Elektrotechnik, Universität Karlsruhe, 7500 Karlsruhe
来源：
THIN SOLID FILMS | 1991年 / 199卷 / 02期
关键词：
D O I：
10.1016/0040-6090(91)90007-K
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Al2O3 films were produced by bombardment with oxygen ions during evaporation in a conventional electron beam evaporation system. Contrary to films produced without ion bombardment but otherwise identical parameters, these Al2O3 films exhibited considerably improved dielectric properties. The improvements can be explained by a significantly increased homogeneity and a raised density of the Al2O3 films.
引用
收藏
页码：247 / 257
页数：11
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