GAIN AND CARRIER LIFETIME MEASUREMENT IN ALGAAS QUANTUM WELL LASERS

被引:0
|
作者
DUTTA, NK [1 ]
HARTMAN, RL [1 ]
TSANG, WT [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1109/T-ED.1983.21356
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1575 / 1575
页数:1
相关论文
共 50 条
  • [31] Carrier Dynamics in Quantum Well Lasers
    A. Thränhardt
    S. W. Koch
    J. Hader
    J. V. Moloney
    Optical and Quantum Electronics, 2006, 38 : 361 - 368
  • [32] Carrier density dependence of the lifetime of InGaAs/AlGaAs high power lasers
    Rinner, F
    Rogg, J
    Wiedmann, N
    Konstanzer, H
    Dammann, M
    Mikulla, M
    Poprawe, R
    Weimann, G
    TEST AND MEASUREMENT APPLICATIONS OF OPTOELECTRONIC DEVICES, 2002, 4648 : 1 - 8
  • [33] Influence of gain saturation and carrier dynamic models on the modulation response of quantum well lasers
    Sukhoivanov, I.A.
    Optical and Quantum Electronics, 1999, 31 (09): : 997 - 1007
  • [34] Influence of gain saturation and carrier dynamic models on the modulation response of quantum well lasers
    I. A. Sukhoivanov
    Optical and Quantum Electronics, 1999, 31 : 997 - 1007
  • [35] Influence of gain saturation and carrier dynamic models on the modulation response of quantum well lasers
    Sukhoivanov, IA
    OPTICAL AND QUANTUM ELECTRONICS, 1999, 31 (9-10) : 997 - 1007
  • [36] The effect of carrier capture and escape on the optical gain of quantum-well semiconductor lasers
    Wartak, MS
    Kucharczyk, M
    Makino, T
    CANADIAN JOURNAL OF PHYSICS, 1999, 77 (02) : 157 - 166
  • [37] DEGRADATION AND LIFETIME STUDIES OF HIGH-POWER SINGLE-QUANTUM-WELL ALGAAS RIDGE LASERS
    GFELLER, FR
    WEBB, DJ
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (01) : 14 - 20
  • [38] InGaAs/AlGaAs strained layer quantum well lasers
    Xu, Zuntu
    Xu, Junying
    Yang, Guowen
    Zhang, Jingming
    Chen, Changhua
    Chen, Lianghui
    Shen, Guangdi
    Zhongguo Jiguang/Chinese Journal of Lasers, 1999, 26 (05): : 390 - 394
  • [39] Reliability of InGaAs/AlGaAs strained quantum well lasers
    Inst of Semiconductors, Chinese Acad of Sciences, Beijing, China
    Pan Tao Ti Hsueh Pao, 4 (278-283):
  • [40] GROWTH AND CHARACTERIZATION OF ALGAAS/GAAS QUANTUM WELL LASERS
    BURNHAM, RD
    STREIFER, W
    PAOLI, TL
    HOLONYAK, N
    JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 370 - 382