GAIN AND CARRIER LIFETIME MEASUREMENT IN ALGAAS QUANTUM WELL LASERS

被引:0
|
作者
DUTTA, NK [1 ]
HARTMAN, RL [1 ]
TSANG, WT [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1109/T-ED.1983.21356
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1575 / 1575
页数:1
相关论文
共 50 条
  • [21] Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum-well lasers
    Esquivias, I
    Romero, B
    Weisser, S
    Czotscher, K
    Ralston, JD
    Larkins, EC
    Arias, J
    Schonfelder, A
    Mikulla, M
    Fleissner, J
    Rosenzweig, J
    HIGH-SPEED SEMICONDUCTOR LASER SOURCES, 1996, 2684 : 17 - 26
  • [22] Carrier lifetime and recombination in long-wavelength quantum-well lasers
    Pikal, JM
    Menoni, CS
    Temkin, H
    Thiagarajan, P
    Robinson, GY
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1999, 5 (03) : 613 - 619
  • [23] THRESHOLD CURRENTS FOR ALGAAS QUANTUM WELL LASERS
    SUGIMURA, A
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (04) : 336 - 343
  • [24] Structural Dependence of Optical Gain and Carrier Losses in InGaN Quantum Well Lasers
    Hader, J.
    Moloney, J. V.
    Koch, S. W.
    2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5, 2007, : 2318 - +
  • [25] Severe gain suppression due to dynamic carrier heating in quantum well lasers
    Grupen, M
    Hess, K
    APPLIED PHYSICS LETTERS, 1997, 70 (07) : 808 - 810
  • [26] Measurement of Irradiation Impact on Carrier Lifetime in a Quantum Well Laser Diode
    Boutillier, Mathieu
    Gauthier-Lafaye, Olivier
    Bonnefont, Sophie
    Lozes-Dupuy, Francoise
    Lagarde, Delphine
    Lombez, Laurent
    Marie, Xavier
    Ligeret, Vincent
    Parillaud, Olivier
    Krakowski, Michel
    Gilard, Olivier
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (04) : 2155 - 2159
  • [27] Structural and carrier density dependence of carrier lifetime in InGaAs/GaAs multiple-quantum-well lasers
    Czotscher, K
    Weisser, S
    Larkins, EC
    Fleissner, J
    Ralston, JD
    Schonfelder, A
    Rosenzweig, J
    Esquivias, I
    APPLIED PHYSICS LETTERS, 1996, 69 (21) : 3158 - 3160
  • [28] Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser
    Feng, M.
    Holonyak, N., Jr.
    James, A.
    Cimino, K.
    Walter, G.
    Chan, R.
    APPLIED PHYSICS LETTERS, 2006, 89 (11)
  • [29] Carrier dynamics in quantum well lasers
    Thränhardt, A
    Koch, SW
    Hader, J
    Moloney, JV
    OPTICAL AND QUANTUM ELECTRONICS, 2006, 38 (4-6) : 361 - 368
  • [30] Carrier distribution in quantum well lasers
    Evans, P.A., 1740, Institute of Physics Publishing Ltd, Bristol, United Kingdom (09):