Post-growth Annealing of Cadmium Zinc Telluride Crystals for Room-Temperature Radiation Detectors

被引：0

作者：

G. Yang

A.E. Bolotnikov

P.M. Fochuk

Y. Cui

G. S. Camarda

A. Hossain

K. H. Kim

J. Horace

B. McCall

R. Gul

O.V. Kopach

S.U. Egarievwe

R.B. James

机构：

[1] Brookhaven National Laboratory,

[2] Chernivtsi National University,undefined

[3] Alabama A&M University,undefined

来源：

Journal of Electronic Materials | 2012年 / 41卷

关键词：

CZT; post-growth annealing; Te inclusions; resistivity; surface morphology;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We investigated the effects of post-growth annealing on cadmium zinc telluride crystals intended for use as room-temperature radiation detectors. Annealing under Cd vapor effectively eliminated Te inclusions. The material’s resistivity was lowered, and loss of Zn component was observed. Annealing under Cd + Zn vapors similarly removed Te inclusions. Furthermore, after exposure to the two vapors, we noted a change in the crystal surface morphology, i.e., formation of patterns of parallel lines. In contrast to annealing under Cd vapor alone, high resistivity was maintained after suitably controlling the Cd and Zn pressures.

引用

页码：2912 / 2916

页数：4

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