Erosion of the GaAs target under irradiation by a high-power pulsed ion beam

被引：0

作者：

Fen L.T. ^{[1
]}

Remnev G.E. ^{[1
]}

Saltymakov M.S. ^{[1
]}

Gusel'nikov V.I. ^{[1
]}

Makeev V.A. ^{[1
]}

Ivonin I.V. ^{[2
]}

Naiden E.P. ^{[2
,3
]}

Yurchenko V.I. ^{[4
]}

机构：

[1] V. D. Kuznetsov Siberian Physical-Technical Institute, Tomsk State University

来源：

Russian Physics Journal | 2007年 / 50卷 / 1期

关键词：

GaAs; Current Pulse; Surface Relief; Ablation Material; Surface Roughness Parameter;

D O I：

10.1007/s11182-007-0007-6

中图分类号：

学科分类号：

摘要：

The results of examination of the GaAs-target erosion under irradiation by a high-power pulsed ion beam are reported. In the experiments, use was made of a high-power pulsed ion source with the following parameters: ion energy - 250 keV, target current density - 350 A/cm2, pulse duration - 80 ns, target energy density - up to 7 J/cm2. The target erosion coefficient and its dependence on the number of successive pulses are measured. It is found that the surface roughness parameter is increased with the number of successive beam pulses. A regular structure of surface relief is observed to form in the case where the number of pulses > 20-40. © Springer Science+Business Media, Inc. 2007.

引用

页码：66 / 70

页数：4

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