Highly sensitive nanoscale spin-torque diode

被引:0
|
作者
Miwa S. [1 ]
Ishibashi S. [1 ,2 ]
Tomita H. [1 ]
Nozaki T. [1 ,2 ]
Tamura E. [1 ]
Ando K. [1 ]
Mizuochi N. [1 ]
Saruya T. [1 ,3 ]
Kubota H. [2 ]
Yakushiji K. [2 ]
Taniguchi T. [2 ]
Imamura H. [2 ]
Fukushima A. [2 ]
Yuasa S. [2 ]
Suzuki Y. [1 ,2 ]
机构
[1] Graduate School of Engineering Science, Osaka University, Toyonaka
[2] National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba
[3] Process Development Center, Canon ANELVA Corporation, Kawasaki
来源
Yuasa, S. | 1600年 / Nature Publishing Group卷 / 13期
基金
日本学术振兴会;
关键词
Room temperature;
D O I
10.1038/nmat3778
中图分类号
学科分类号
摘要
Highly sensitive microwave devices that are operational at room temperature are important for high-speed multiplex telecommunications. Quantum devices such as superconducting bolometers possess high performance but work only at low temperature. On the other hand, semiconductor devices, although enabling high-speed operation at room temperature, have poor signal-to-noise ratios. In this regard, the demonstration of a diode based on spin-torque-induced ferromagnetic resonance between nanomagnets represented a promising development, even though the rectification output was too small for applications (1.4 mV mW-1). Here we show that by applying d.c. bias currents to nanomagnets while precisely controlling their magnetization-potential profiles, a much greater radiofrequency detection sensitivity of 12,000 mV mW-1 is achievable at room temperature, exceeding that of semiconductor diode detectors (3,800 mV mW-1). Theoretical analysis reveals essential roles for nonlinear ferromagnetic resonance, which enhances the signal-to-noise ratio even at room temperature as the size of the magnets decreases. © 2014 Macmillan Publishers Limited.
引用
收藏
页码:50 / 56
页数:6
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