Room-temperature electroreflectance and reflectance of a GaAs/AlGaAs single quantum well structure

被引：0
|
作者：
A. A. Herasimovich
S. V. Shokhovets
G. Gobsch
D. S. Domanevskii
机构：
[1] Belarussian National Technical University,Institute of Physics
[2] Ilmenau Technical University,undefined
来源：
Semiconductors | 2005年 / 39卷
关键词：
Experimental Data; Magnetic Material; Electromagnetism; Barrier Layer; Transfer Matrix;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The room-temperature electroreflectance and reflectance of a GaAs/AlGaAs single quantum well (QW) structure are studied. An oscillatory behavior of the electroreflectance signal as a function of the thickness of the top AlGaAs barrier layer is observed. The experimental data are analyzed using a dielectric function of QWs and the transfer matrix method for multilayer systems. This analysis allows the determination of the parameters of the QW and the barrier layers.
引用
收藏
页码：697 / 702
页数：5
相关论文
共 50 条
  • [41] Temperature dependenceof the photoluminescence of single GaAs/AlGaAs concentric quantum ring structure
    Bonfanti, M.
    Sanguinetti, S.
    Mano, T.
    Kuroda, T.
    Gurioli, M.
    Abbarchi, M.
    Grilli, E.
    Koguchi, N.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11, 2006, 3 (11): : 3856 - +
  • [42] Surface photovoltage spectroscopy of an InGaAs/GaAs/AlGaAs single quantum well laser structure
    Ashkenasy, N
    Leibovitch, M
    Shapira, Y
    Pollak, FH
    Burnham, GT
    Wang, X
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) : 1146 - 1149
  • [43] PHOTOCURRENT IN A SCHOTTKY-GATED ALGAAS/GAAS STRUCTURE WITH A SINGLE-QUANTUM-WELL
    ZHOKHOVETS, SV
    GOLDHAHN, R
    GOBSCH, G
    STEIN, N
    CHAMBERLAIN, JM
    CHENG, TS
    HENINI, M
    SEMICONDUCTORS, 1995, 29 (07) : 639 - 647
  • [44] ULTRAFAST, ROOM-TEMPERATURE, RESONANCE-ENHANCED 3RD-ORDER OPTICAL SUSCEPTIBILITY TENSOR OF AN ALGAAS/GAAS QUANTUM-WELL
    LE, HQ
    DICECCA, S
    OPTICS LETTERS, 1991, 16 (12) : 901 - 903
  • [45] Room-temperature dephasing in InAs/GaAs quantum dots
    Borri, P.
    Langbein, W.
    Hvam, J.M.
    Mao, M.-H.
    Heinrichsdorff, F.
    Bimberg, D.
    IQEC, International Quantum Electronics Conference Proceedings, 1999,
  • [46] Room temperature memory operation of a single InAs quantum dot layer in a GaAs/AlGaAs heterostructure
    Mueller, C. R.
    Worschech, L.
    Heinrich, J.
    Hoefling, S.
    Forchel, A.
    APPLIED PHYSICS LETTERS, 2008, 93 (06)
  • [47] MEASUREMENTS OF ROOM-TEMPERATURE BAND-GAP-RESONANT OPTICAL NONLINEARITIES OF GAAS/ALGAAS MULTIPLE QUANTUM WELLS AND BULK GAAS
    PARK, SH
    MORHANGE, JF
    JEFFERY, AD
    MORGAN, RA
    CHAVEZPIRSON, A
    GIBBS, HM
    KOCH, SW
    PEYGHAMBARIAN, N
    DERSTINE, M
    GOSSARD, AC
    ENGLISH, JH
    WEIGMANN, W
    APPLIED PHYSICS LETTERS, 1988, 52 (15) : 1201 - 1203
  • [48] GAUSSIAN LINE-SHAPE ANALYSIS OF THE ROOM-TEMPERATURE PHOTOREFLECTANCE OF GAAS/ALGAAS AND INAS/GAAS MULTIPLE-QUANTUM WELLS
    LOMASCOLO, M
    CINGOLANI, R
    CALCAGNILE, L
    DIGIULIO, M
    VASANELLI, L
    BRANDT, O
    PLOOG, K
    SOLID STATE COMMUNICATIONS, 1993, 87 (05) : 481 - 485
  • [49] Room-temperature spin relaxation in a (110)-oriented GaAs/AlGaAs superlattice with tunnel-coupled quantum wells
    Ohno, Yuzo
    Iba, Satoshi
    Okamoto, Ryogo
    Obata, Yuma
    Obu, Kouki
    Domingez, Jonathan Johan Pascual
    Saito, Hidekazu
    APPLIED PHYSICS EXPRESS, 2020, 13 (12)
  • [50] INTER-SUB-BAND ABSORPTION IN GAAS/ALGAAS QUANTUM WELLS BETWEEN 4.2 K AND ROOM-TEMPERATURE
    VONALLMEN, P
    BERZ, M
    PETROCELLI, G
    REINHART, FK
    HARBEKE, G
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (12) : 1211 - 1216
12345