Room-temperature electroreflectance and reflectance of a GaAs/AlGaAs single quantum well structure

被引：0
|
作者：
A. A. Herasimovich
S. V. Shokhovets
G. Gobsch
D. S. Domanevskii
机构：
[1] Belarussian National Technical University,Institute of Physics
[2] Ilmenau Technical University,undefined
来源：
Semiconductors | 2005年 / 39卷
关键词：
Experimental Data; Magnetic Material; Electromagnetism; Barrier Layer; Transfer Matrix;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The room-temperature electroreflectance and reflectance of a GaAs/AlGaAs single quantum well (QW) structure are studied. An oscillatory behavior of the electroreflectance signal as a function of the thickness of the top AlGaAs barrier layer is observed. The experimental data are analyzed using a dielectric function of QWs and the transfer matrix method for multilayer systems. This analysis allows the determination of the parameters of the QW and the barrier layers.
引用
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页码：697 / 702
页数：5
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