Deep centers in undoped semi-insulating InP

被引：0
|
作者：
Z. -Q. Fang
D. C. Look
M. Uchida
K. Kainosho
O. Oda
机构：
[1] Wright State University,Physics Department
[2] Japan Energy Corporation,Materials and Components Laboratory
来源：
Journal of Electronic Materials | 1998年 / 27卷
关键词：
Deep centers; semi-insulating (SI) InP; thermally stimulated current (TSC) spectroscopy; wafer annealing;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Undoped semi-insulating (SI) InP samples, subjected to one-step and multi-step wafer annealing, and lightly and normally Fe-doped SI InP samples without annealing have been characterized by thermally stimulated current (TSC) spectroscopy. A dominant deep center at 0.63 eV is found in all samples and is undoubtedly due to iron. Two prominent TSC traps, Tb (0.44 eV) and Td (0.33 eV), found in undoped SI InP, are thought to be related to the phosphorus antisite PIn, and traps at low temperatures, like Te* (0.19 eV), to the phosphrus vacancy VP.
引用
收藏
页码：L68 / L71
相关论文
共 50 条
  • [41] Mechanisms of the semi-insulating of InP by anelastic spectroscopy
    Cantelli, R
    Cordero, F
    Palumbo, O
    Cannelli, G
    Trequattrini, F
    Guadalupi, GM
    Molinas, B
    PHYSICAL REVIEW B, 2000, 62 (03) : 1828 - 1834
  • [42] UNDOPED SEMI-INSULATING LEC GAAS - A MODEL AND A MECHANISM
    OLIVER, JR
    FAIRMAN, RD
    CHEN, RT
    YU, PW
    ELECTRONICS LETTERS, 1981, 17 (22) : 839 - 841
  • [43] PHOTOCONDUCTIVE CHARACTERIZATION OF UNDOPED, SEMI-INSULATING GAAS CRYSTALS
    MITA, Y
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1391 - 1393
  • [44] Defect structure-transformation on anion Frenkel pair defects in InP. Application for undoped semi-insulating InP
    (Publ by Elsevier Science Publishers B.V., Amsterdam, Neth):
  • [45] Ion implantation of semi-insulating InP materials
    ZENG Qinggao(Chongqing Optoelectronics Research Institute
    SemiconductorPhotonicsandTechnology, 1995, (Z1) : 1 - 8
  • [46] SIMULATION OF ANOMALOUS BE DIFFUSION IN SEMI-INSULATING INP
    FARLEY, CW
    STREETMAN, BG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (04) : 946 - 947
  • [47] GROOVE GAINASP LASER ON SEMI-INSULATING INP
    YU, KL
    KOREN, U
    CHEN, TR
    CHEN, PC
    YARIV, A
    ELECTRONICS LETTERS, 1981, 17 (21) : 790 - 792
  • [48] MICROSCOPIC EXAMINATION OF THE DEEP DONOR EL2 IN UNDOPED SEMI-INSULATING GAAS
    STIRLAND, DJ
    GRANT, I
    BROZEL, MR
    WARE, RM
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (67): : 285 - 290
  • [49] Influence of deep level defects on electrical compensation in semi-insulating InP materials
    Yang Jun
    Zhao You-Wen
    Dong Zhi-Yuan
    Deng Ai-Hong
    Miao Shan-Shan
    Wang Bo
    ACTA PHYSICA SINICA, 2007, 56 (02) : 1167 - 1171
  • [50] SEMI-INSULATING ELECTRICAL-PROPERTIES OF UNDOPED INP AFTER HEAT-TREATMENT IN A PHOSPHORUS ATMOSPHERE
    HOFMANN, D
    MULLER, G
    STRECKFUSS, N
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 48 (04): : 315 - 319
12345