Deep centers in undoped semi-insulating InP

被引：0
|
作者：
Z. -Q. Fang
D. C. Look
M. Uchida
K. Kainosho
O. Oda
机构：
[1] Wright State University,Physics Department
[2] Japan Energy Corporation,Materials and Components Laboratory
来源：
Journal of Electronic Materials | 1998年 / 27卷
关键词：
Deep centers; semi-insulating (SI) InP; thermally stimulated current (TSC) spectroscopy; wafer annealing;
D O I：
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中图分类号：
学科分类号：
摘要：
Undoped semi-insulating (SI) InP samples, subjected to one-step and multi-step wafer annealing, and lightly and normally Fe-doped SI InP samples without annealing have been characterized by thermally stimulated current (TSC) spectroscopy. A dominant deep center at 0.63 eV is found in all samples and is undoubtedly due to iron. Two prominent TSC traps, Tb (0.44 eV) and Td (0.33 eV), found in undoped SI InP, are thought to be related to the phosphorus antisite PIn, and traps at low temperatures, like Te* (0.19 eV), to the phosphrus vacancy VP.
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页码：L68 / L71
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